Everspin

Release Date
2016-11-08

Everspin displays both the 1Gb DDR4 Perpendicular ST-MRAM device and a 1GByte DDR3 Memory Module (DIMM) at Stand A3-545

Everspin displays both the 1Gb DDR4 Perpendicular ST-MRAM device and a 1GByte DDR3 Memory Module (DIMM) at Stand A3-545

Chandler, AZ, November 8, 2016 — Everspin Technologies, Inc., as the leading provider of MRAM solutions, today announced that it will display the industry's first 1Gb ST- MRAM designed with its perpendicular magnetic tunnel junction ( pMTJ) which is being processed by GlobalFoundries. Visitors can see the MRAM 300mm wafer at Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.